AVÃûʪ

Additional Technology (Earlier Lab Work)

Lab Publications

• Garret Moddel, and Stephen Shear, U.S. Patent No. 6,760,080, issued 2004.

• "Fractional bandwidth normalization for optical spectra with application to the solar blackbody spectrum," G. Moddel, Appl. Optics,ÌýÌý40, 413-416 (2001).

• "Fixed-polarizer ellipsometry: a simple technique to measure the thickness of very thin films," B. Trotter, G. Moddel, R. Ostroff, and G. R. Bogart, Opt. Engr.,Ìý38, 902-907 (1999).

• “, Garret Moddel and David Doroski, U.S. Patent No. 5,943,104, issued 1999.

• "Fixed polarizer ellipsometry for simple and sensitive detection of thin films generated by specific molecular interactions: applications in immunoassays and DNA sequence detection," R. M. Ostroff, D. Maul, G. R. Bogart, S. Yang, J. Christian, D. Hopkins, K. Clark, B. Trotter, and G. Moddel, Clinical Chem.,Ìý44, 2031-2035 (1998).

• "Visible photoluminescence from porous a-Si:H and porous a-Si:C:H thin films," M. J. Estes, L. R. Hirsch, S. Wichart, G. Moddel, and D. L. Williamson, J. Appl. Phys.,Ìý82, 1832-1840 (1997).

• “ Garret Moddel, John Wootton, Gary Waldman, David Holder, U.S. Patent No. 5,615,029, issued 1997.

• "Characterization of the visible photoluminescence from anodized porous a-Si:H and a-Si:C:H thin films," M. J. Estes, L. R. Hirsch, S. Wichart, and G. Moddel,ÌýAmorphous Silicon Technology - 1996,ÌýÌýM, Hack, E, A. Schiff, S, Wagner, R, Schropp, and A, Matsuda, ed., Vol. 420 (Materials AVÃûʪ Society, Pittsburgh, 1996) pp. 831-836.

• "Luminescence from amorphous silicon nanostructures," M. J. Estes, and G. Moddel, Phy. Rev. B15,Ìý54, 14,633-14,642 (1996).

• "A model of size-dependent photoluminescence in amorphous silicon nanostructures: comparison with observations of porous silicon," M. J. Estes and G. Moddel, Appl. Phys. Lett.,Ìý68, 1814-1816 (1996).